T3 2000mW infrared laser diode (808nm)

808nm infrared laser diode power of 2000mW.  

Applications: 

Beacons and Lighting 

Communication equipment 

Infrared light source  

Technical parameters: 

Name: AL808T2000 

CW output power (mW): 2000 

Wavelength (nm): 808 + / -10 

Spectral Width (nm): ≤ 5 

Threshold current (mA): ≤ 700 

Operating Current (mA): ≤ 2800 

Operating Voltage: ≤ 2.2 

The slope efficiency (W / A): ≥ 1.0 

Coefficient-temperature wavelength (nm / ℃): 0.3 

Beam Divergence (degrees): 3 / 8 

Station Area (micron): 200x1 

Series resistor (Ω): ≤ 0.25 

Life expectancy (h): 10000 

Packaged in: C-mount 

On request, approximate delivery time: 15-20 days