T1 500mW infrared laser diode (808nm)

808nm infrared laser diode 500mW of power.  

Applications: 

Beacons and Lighting 

Communication equipment 

Infrared light source  

Technical parameters: 

Name: SN808T500 

CW output power (mW): 500 

Wavelength (nm): 808 + / -10 

Spectral Width (nm): ≤ 2.5 

Threshold current (mA): ≤ 130 

Operating Current (mA): ≤ 600 

Operating Voltage: ≤ 2 

The slope efficiency (W / A) ≥ 1 

Coefficient-temperature wavelength (nm / ℃): 0.3 

Beam Divergence (degrees): 12/40 

Station Area (micron): 50x1 

Series resistor (Ω): ≤ 0.6 

Life expectancy (h): 10000 

Packaged in: C-mount 

On request, approximate delivery time: 15-20 days